Transistors RF Bipolar Power 860-960MHz Power
SD4600: Transistors RF Bipolar Power 860-960MHz Power
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| Configuration : | Single | Maximum Operating Frequency : | 960 MHz |
| Collector- Emitter Voltage VCEO Max : | 28 V | Emitter- Base Voltage VEBO : | 3.5 V |
| Continuous Collector Current : | 8 A | Maximum DC Collector Current : | 8 A |
| Power Dissipation : | 146 W | Package / Case : | M173 |
| Packaging : | Bulk |

| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 60 | V |
| VCEO | Collector-Emitter Voltage | 28 | V |
| VEBO | Emitter-Base Voltage | 3.5 | V |
| IC | Device Current | 8 | A |
| PDISS | Power Dissipation | 146 | W |
| TJ | Junction Temperature | +200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD4600 is designed for 960MHz mobile base stations in both analog and digital applications. Including double input and output matching networks, the SD4600 features high impedances allowing operation over the full 860 to 960 MHz bandwidth.