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Part Number: SD56120
Description: The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor des...
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SD56120
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DataSheet
General Description
SD56120 General Description
The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity.
SD56120 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | ± 20 | V |
| ID | Device Current | 14 | A |
| PDISS | Power Dissipation (@ Tc= 70oC) | 260 | W |
| TJ | Max. Operating Junction Temperature | 200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
SD56120 Connection Diagram
SD56120
PDF/DataSheet Download
- Datasheet: SD56120
- File Size: 45001 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
- ·SD5000
- LINEAR [Linear Integrated Systems]
- QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
- 517613 KB
- ·SD5000C
- IRF [International Rectifier]
- STANDARD RECOVERY DIODES Hockey Puk Version
- 180532 KB
- ·SD5000C..R SERIES
- STANDARD RECOVERY DIODES
- 85182 KB
- ·SD5000I
- LINEAR [Linear Integrated Systems]
- QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
- 365774 KB
- ·SD5000I-2
- Vishay Intertechnology
- N-Channel Lateral DMOS FET(最小漏源击穿电压20V，最大阈值电压1.5V的N沟道增强型MOSFET)
- 40939 KB
- ·SD5000-LCC6
- Semelab(Magnatec)
- N-Channel Lateral DMOS FET(N沟道侧面DMOS场效应管)
- 20480 KB
- ·SD5000N
- LINEAR [Linear Integrated Systems]
- QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
- 517613 KB
- ·SD5000T
- LINEAR [Linear Integrated Systems]
- QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS
- 240996 KB
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