SD56120

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Output Power : 100 W
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Package / Case : M246
Continuous Drain Current : 14 A
Gain : 14 dB at 860 MHz


Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Device Current	14	A
PDISS	Power Dissipation (@ Tc= 70oC)	260	W
TJ	Max. Operating Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +150	°C

Description

The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity.

Parameters:

Technical/Catalog Information	SD56120
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M246
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD56120 SD56120 497 5474 ND 4975474ND 497-5474