SD56120MK

The SD56120MK is designed as one kind of common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz.The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity.

Features of the SD56120MK are:(1)excellent thermal stability;(2)common source configuration Push-pull;(3)Pout=100W with 14dB gain @ 860MHz;(4)beO free package.And the absolute maximum ratings of this part can be summarized as:(1)drain-source voltage:65 V;(2)gate-source voltage:±20 V;(3)drain current:14 A;(4)power dissipation (@ Tc=70°C):217 W;(5)max. operating junction temperature:200 °C;(6)storage temperature:-65 to +150 °C.If you want to know more information such as the electrical characteristics about this part,please download the datasheet in www.seekic.com and www.chinaicmart.com .