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SD620CS

Features: Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Specifications ...

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SeekIC No. : 004486691 Detail

SD620CS: Features: Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability For Use in Low Voltag...

SD620CS Data Sheet

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Part Number:
SD620CS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications






Specifications

Characteristic
Symbol
SD
620CS
SD
630CS
SD
640CS
SD
650CS
SD
660CS
SD
680CS
SD
6100CS
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
80
100
V
RMS Reverse Voltage
VR(RMS)
14
21
28
35
42
56
70
V
Average Rectified Output Current @TL = 75°C
IO
6.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
75
A
Forward Voltage (Note 1) @IF = 3.0A
VFM
0.55
0.70
0.85
V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
0.2
15
mA
Typical Junction Capacitance (Note 2)
Cj
400
pF
Typical Thermal Resistance Junction to Ambient
RJA
80
K/W
Operating Temperature Range
Tj
-50 to +125
°C
Storage Temperature Range
TSTG
50 to +150
°C

Note: 1. Mounted on P.C. Board with 14mm2 (0.13mm thick) copper pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.






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