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SDB110Q

Features: · Low power rectified· Silicon epitaxial type· Battery changing diodePinoutSpecifications Characteristic Symbol Ratings Unit Reverse voltage VR 10 V Repetitive peak forward current IFRM* 0.5 A Forward current IF 30 mA Junction temperat...

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SeekIC No. : 004486947 Detail

SDB110Q: Features: · Low power rectified· Silicon epitaxial type· Battery changing diodePinoutSpecifications Characteristic Symbol Ratings Unit Reverse voltage VR 10 V Repetitive...

SDB110Q Data Sheet

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Part Number:
SDB110Q
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· Low power rectified
· Silicon epitaxial type
· Battery changing diode




Pinout






Specifications

Characteristic
Symbol
Ratings
Unit
Reverse voltage
VR
10
V
Repetitive peak forward current
IFRM*
0.5
A
Forward current
IF
30
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ~ 150
°C





Description

High Current Capability and Low Forward Voltage Drop
This production of the SDB110Q is enhanced with lower VF and higher surge to provide lower power loss and higher efficiency. Also this production of the SDB110Q provides the ultimate efficiency in power conversion and power switching applications. The applications are power supply output rectifications and SMPS applications





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