Features: Metal to silicon rectifier, majority carrier conductionLow forward voltage dropEasy pick and placeHigh surge current capabilityPlastic material used carriers Underwriters Laboratory Classification 94V-OEpitaxial constructionHigh temperature soldering: 260/ 10 seconds at terminalsSmall si...
SDB12: Features: Metal to silicon rectifier, majority carrier conductionLow forward voltage dropEasy pick and placeHigh surge current capabilityPlastic material used carriers Underwriters Laboratory Classi...
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Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering: 260/ 10 seconds at terminals
Small size, single installation lead solderable per MIL-STD-202 Method 208
| Type Number |
Symbol |
SDB 12 |
SDB 13 |
SDB 14 |
SDB 15 |
SDB 16 |
SDB 19 |
SDB 110 |
Units |
|
SDBS 12 |
SDBS 13 |
SDBS 14 |
SDBS 15 |
SDBS 16 |
SDBS 19 |
SDBS 110 | |||
| Maximum Recurrent Peak Reverse Voltage |
VRRM |
20 |
30 |
40 |
50 |
60 |
90 |
100 |
V |
| Maximum RMS Voltage |
VRMS |
14 |
21 |
28 |
35 |
42 |
63 |
70 |
V |
| Maximum DC Blocking Voltage |
VDC |
20 |
30 |
40 |
50 |
60 |
90 |
100 |
V |
| Maximum Average Forward Rectified Current at TL(See Fig. 1) |
I(AV) |
1.0 |
A | ||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM |
30 |
A | ||||||
| Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A |
VF |
0.5 |
0.75 |
0.80 |
V | ||||
| Maximum DC Reverse Current @ TA =25 at Rated DC Blocking Voltage @ TA=100 |
IR |
0.4 |
0.05 |
mA mA | |||||
|
10 |
5.0 |
0.5 | |||||||
| Typical Junction Capacitance (Note 3) |
Cj |
50 |
pF | ||||||
| Typical Thermal Resistance ( Note 2 ) |
R JL R JA |
28 88 |
/W /W | ||||||
| Operating Temperature Range |
TJ |
-65 to +125 |
-65 to +150 |
||||||
| Storage Temperature Range |
TSTG |
-65 to +150 |
|||||||