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SDB20S30

Schottky (Diodes & Rectifiers) Schottky Diode Silicon Carbide

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SDB20S30: Schottky (Diodes & Rectifiers) Schottky Diode Silicon Carbide

SDB20S30 Data Sheet

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Part Number:
SDB20S30
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

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Product : Schottky Silicon Carbide Diodes Peak Reverse Voltage : 300 V
Forward Continuous Current : 10 A Max Surge Current : 36 A
Configuration : Dual Common Cathode Forward Voltage Drop : 1.7 V
Maximum Reverse Leakage Current : 200 uA Maximum Power Dissipation : 65 W
Operating Temperature Range : - 55 C to + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Reel    

Description

Recovery Time :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Packaging : Reel
Forward Continuous Current : 10 A
Maximum Reverse Leakage Current : 200 uA
Operating Temperature Range : - 55 C to + 175 C
Configuration : Dual Common Cathode
Package / Case : TO-220
Forward Voltage Drop : 1.7 V
Peak Reverse Voltage : 300 V
Max Surge Current : 36 A
Maximum Power Dissipation : 65 W


Features:

· Revolutionary semiconductor material - Silicon Carbide
·Switching behavior benchmark
· No reverse recovery
·No temperature influence on the switching behavior
· No forward recovery


Specifications

                                       Parameter
Symbol
Value
Unit
Continuous forward current, TC=100
IF
10
A
RMS forward current, f=50Hz
IFRMS
14
Surge non repetitive forward current, sine halfwave
TC=25 , tp=10ms
IFSM
36
Repetitive peak forward current
Tj=150 , TC=100 , D=0.1
IFRM
45
Non repetitive peak forward current
tp=10µs, TC=25
IFMAX
100
i 2t value, TC=25 , tp=10ms
i2dt
6.5
A²s
Repetitive peak reverse voltage
VRRM
300
V
Surge peak reverse voltage
VRSM
300
Power dissipation, single diode mode, TC=25
Ptot
65
W
Operating and storage temperature
Tj , Tstg
-55... +175



Parameters:

Technical/Catalog InformationSDB20S30
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Diode Type Silicon Carbide
Diode Configuration1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)300V
Current - Average Rectified (Io) (per Diode)10A (DC)
Voltage - Forward (Vf) (Max) @ If1.7V @ 10A
Current - Reverse Leakage @ Vr200A @ 300V
Reverse Recovery Time (trr)0ns
SpeedNo Recovery Time > 500mA (Io)
Mounting TypeSurface Mount
Package / CasePG-TO263
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SDB20S30
SDB20S30



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