SDB412WS

The SDB412WS is a kind of silicon epitaxial planar schottky barrier diode which can applied in low power rectification. The characteristics at Ta = 25°C of SDB412WS can be summarized as (1)forward voltage at I F = 10 mA/ at I F = 500 mA V F: 0.3/ 0.5 V; (2)reverse current at V R = 10 V/ at V R = 40 V I R: 30/ 200 A; (3)total capacitance at V R = 10 V, f = 1 MHz C T: 20 pF.

The absolute maximum ratings of SDB412WS are (1)small surface mounting type; (2)low forward voltage; (3)high reliability.

The features of SDB412WS can be summarized as (1)peak reverse voltage VRM: 40 V; (2)reverse voltage VR: 20 V; (3)average forward current I O: 0.5 A; (4)peak forward surge current IFSM: 3 A; (5)junction temperature T j 125 °C; (6)storage temperature range Tstg: - 40 to + 125 °C.