Purchase SDD04S60, In-stock SDD04S60 From SeekIC.
MFG:INFINEON D/C:07+
- Table of contents:
SDD04S60
-
Suppliers
DataSheet
General Description
SDD04S60 Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Continuous forward current, TC=100 |
IF |
4 |
A |
| RMS forward current, f=50Hz |
IFRMS |
5.6 | |
| Surge non repetitive forward current, sine halfwave TC=25, tp=10ms |
IFSM |
12.5 | |
| Repetitive peak forward current Tj=150, TC=100, D=0.1 |
IFRM |
18 | |
| Non repetitive peak forward current tp=10µs, TC=25 |
IFMAX |
40 | |
| i 2t value, TC=25, tp=10ms |
i2dt |
0.78 |
A²s |
| Repetitive peak reverse voltage |
VRRM |
600 |
V |
| Surge peak reverse voltage |
VRSM |
600 | |
| Power dissipation, TC=25 |
Ptot |
36.5 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +175 |
|
SDD04S60 Features
• Worlds first 600V Schottky diode
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• Ideal diode for Power Factor Correction up to 800W1)
• No forward recovery
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• Ideal diode for Power Factor Correction up to 800W1)
• No forward recovery
SDD04S60
PDF/DataSheet Download
- Datasheet: SDD04S60
- File Size: 283430 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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