SDD30N03L

Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous @TJ=125 -Pulseda ID 30 A IDM 90 A ...

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SeekIC No. : 004487013 Detail

SDD30N03L: Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate...

floor Price/Ceiling Price

Part Number:
SDD30N03L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Super high dense cell design for low RDS(ON).
·Rugged and reliable.
·TO-252 and TO-251 Package.



Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS
±20 V
Drain Current-Continuous @TJ=125
-Pulseda
ID 30 A
IDM
90 A
Drain-Source Diode Forward Current IS 30 A
Maximum Power Dissipation
@Tc=25
Derate above 25
PD
50 W
0.3 W/
Temperature Range
Operating and Storage
TJ, TSTG -55 to 175
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case RJC 3 /W
Thermal Resistance, Junction-to-Ambient RJA
50 /W



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