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SDP04S60

Features: • Worlds first 600V Schottky diode• Revolutionary semiconductor material - Silicon Carbide• Switching behavior benchmark• No reverse recovery• No temperature influence on the switching behavior• Ideal diode for Power Factor Correction up to 800W1)̶...

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SeekIC No. : 004487100 Detail

SDP04S60: Features: • Worlds first 600V Schottky diode• Revolutionary semiconductor material - Silicon Carbide• Switching behavior benchmark• No reverse recovery• No temperature ...

SDP04S60 Data Sheet

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Part Number:
SDP04S60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Worlds first 600V Schottky diode
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• Ideal diode for Power Factor Correction up to 800W1)
• No forward recovery


Specifications

Parameter
Symbol
Value
Unit
Continuous forward current, TC=100
IF
4
A
RMS forward current, f=50Hz
IFRMS
5.6
Surge non repetitive forward current, sine halfwave
TC=25, tp=10ms
IFSM
12.5
Repetitive peak forward current
Tj=150, TC=100, D=0.1
IFRM
18
Non repetitive peak forward current
tp=10µs, TC=25
IFMAX
40
i 2t value, TC=25, tp=10ms
i2dt
0.78
A²s
Repetitive peak reverse voltage
VRRM
600
V
Surge peak reverse voltage
VRSM
600
Power dissipation, TC=25
Ptot
36.5
W
Operating and storage temperature
Tj , Tstg
-55... +175



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