SDP06S60

Series: -
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 600V
Packaging: Tube
Package / Case: TO-220-3
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 6A (DC)
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Supplier Device Package: P-TO220AB


Specifications

Parameter	Symbol	Value	Unit
Continuous forward current, TC=100°C	IF	6	A
RMS forward current, f=50Hz	IFRMS	8.4
Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms	IFSM	21.5
Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1	IFRM	28
Non repetitive peak forward current tp=10µs, TC=25°C	IFMAX	60
i 2t value, TC=25°C, tp=10ms	i2dt	2.3	A²s
Repetitive peak reverse voltage	VRRM	600	V
Surge peak reverse voltage	VRSM	600
Power dissipation, TC=25°C	Ptot	57.6	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C

Parameters:

Technical/Catalog Information	SDP06S60
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	6A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 6A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	200A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220AB
Packaging	Tube
Capacitance @ Vr, F	300pF @ 0V, 1MHz
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SDP06S60 SDP06S60