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SDR9MUF

Features: • Ultra Fast Recovery: 70 nsec maximum.• PIV to 1000 Volts.• Low Reverse Leakage Current.• Hermetically Sealed.• Single Chip Construction.• Replaces Larger DO-4 Rectifiers• Low Thermal Resistance• TX, TXV, and Space Level Screening Availabl...

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SeekIC No. : 004487141 Detail

SDR9MUF: Features: • Ultra Fast Recovery: 70 nsec maximum.• PIV to 1000 Volts.• Low Reverse Leakage Current.• Hermetically Sealed.• Single Chip Construction.• Replaces Lar...

SDR9MUF Data Sheet

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Part Number:
SDR9MUF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• Ultra Fast Recovery: 70 nsec maximum.
• PIV to 1000 Volts.
• Low Reverse Leakage Current.
• Hermetically Sealed.
• Single Chip Construction.
• Replaces Larger DO-4 Rectifiers
• Low Thermal Resistance
• TX, TXV, and Space Level Screening Available
• Fast and Hyper Fast Recovery Available. Contact Factory.


Specifications

Maximum Ratings SYMBOL VALUE UNITS
DC Blocking Voltage SDR9JUF & FSMS
SDR9KUF & FSMS
SDR9MUF & FSMS		 VRRM
VRWM
VR		 600
800
1000		 Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TA= 25 oC)		 Io 9 Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25oC)		 IFSM 125 Amps
Operating and Storage Temperature TOP & TSTG -65 TO +175 oC
Maximum Thermal Resistance
Junction to Lead, L = .125" (Axial Lead)
Junction to End Tab (Surface Mount)		 R2JL
R2JE		 8
4		 oC/W



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