SDT06S60

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Maximum Reverse Leakage Current : 200 uA
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Package / Case : TO-220
Forward Continuous Current : 6 A
Forward Voltage Drop : 1.7 V
Max Surge Current : 21.5 A


Specifications

Parameter	Symbol	Value	Unit
Continuous forward current, TC=100°C	IF	6	A
RMS forward current, f=50Hz	IFRMS	8.4
Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms	IFSM	21.5
Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1	IFRM	28
Non repetitive peak forward current tp=10µs, TC=25°C	IFMAX	60
i 2t value, TC=25°C, tp=10ms	i2dt	2.3	A²s
Repetitive peak reverse voltage	VRRM	600	V
Surge peak reverse voltage	VRSM	600
Power dissipation, TC=25°C	Ptot	57.6	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C

Parameters:

Technical/Catalog Information	SDT06S60
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Diode Type	Silicon Carbide
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	6A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 6A
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	200A @ 600V
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-2-2
Packaging	Tube
Capacitance @ Vr, F	300pF @ 0V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SDT06S60 SDT06S60 SDT06S60IN ND SDT06S60INND SDT06S60IN