Position: Home  > All Categories> Integrated Circuits (ICs) > SDT08S60

SDT08S60

Schottky (Diodes & Rectifiers) Silicon Carbide Schottky Diode 600V

product image

SDT08S60 Picture
See larger image
SeekIC No. : 00193053 Detail

SDT08S60: Schottky (Diodes & Rectifiers) Silicon Carbide Schottky Diode 600V

SDT08S60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SDT08S60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Product : Schottky Silicon Carbide Diodes Peak Reverse Voltage : 600 V
Forward Continuous Current : 8 A Max Surge Current : 26 A
Configuration : Single Forward Voltage Drop : 1.7 V
Maximum Reverse Leakage Current : 300 uA Operating Temperature Range : - 55 C to + 175 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

Recovery Time :
Maximum Power Dissipation :
Product : Schottky Silicon Carbide Diodes
Max Surge Current : 26 A
Mounting Style : Through Hole
Configuration : Single
Packaging : Tube
Peak Reverse Voltage : 600 V
Operating Temperature Range : - 55 C to + 175 C
Forward Continuous Current : 8 A
Package / Case : TO-220
Maximum Reverse Leakage Current : 300 uA
Forward Voltage Drop : 1.7 V


Specifications

Parameter
Symbol
Value
Unit
Continuous forward current, TC=100°C
IF
8
A
RMS forward current, f=50Hz
IFRMS
11.3
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IFSM
26
Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1
IFRM
32
Non repetitive peak forward current tp=10s, TC=25°C
IFMAX
80
i 2t value, TC=25°C, tp=10ms
Ji2dt
3.4
A2s
Repetitive peak reverse voltage
VRRM
600
V
Surge peak reverse voltage
VRSM
600
Power dissipation, TC=25°C
Ptot
65
W
Operating and storage temperature
Tj,Tstg
-55to+175



Parameters:

Technical/Catalog InformationSDT08S60
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Diode Type Silicon Carbide
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)8A (DC)
Voltage - Forward (Vf) (Max) @ If1.7V @ 8A
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr300A @ 600V
SpeedNo Recovery Time > 500mA (Io)
Mounting TypeThrough Hole, Radial
Package / CaseTO-220-2
PackagingTape & Reel (TR)
Capacitance @ Vr, F280pF @ 0V, 1MHz
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SDT08S60
SDT08S60



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Line Protection, Backups
BX0023
A20B-1008-0550
Switches
US32DMRJ
HBGQ22P-11ET
View more