Schottky (Diodes & Rectifiers) Silicon Carbide Schottky Diode
SDT10S60: Schottky (Diodes & Rectifiers) Silicon Carbide Schottky Diode
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Product : | Schottky Silicon Carbide Diodes | Peak Reverse Voltage : | 600 V |
| Forward Continuous Current : | 10 A | Max Surge Current : | 31 A |
| Configuration : | Single | Forward Voltage Drop : | 1.7 V |
| Maximum Reverse Leakage Current : | 350 uA | Operating Temperature Range : | - 55 C to + 175 C |
| Mounting Style : | Through Hole | Package / Case : | TO-220 |
| Packaging : | Tube |
|
Parameter |
Symbol |
Value |
Unit |
| Continuous forward current, TC=100°C |
IF |
10 |
A |
| RMS forward current, f=50Hz |
IFRMS |
14.1 | |
| Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms |
IFSM |
31 | |
| Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 |
IFRM |
39 | |
| Non repetitive peak forward current tp=10s, TC=25°C |
IFMAX |
100 | |
| i 2t value, TC=25°C, tp=10ms |
Ji2dt |
4.8 |
A2s |
| Repetitive peak reverse voltage |
VRRM |
600 |
V |
| Surge peak reverse voltage |
VRSM |
600 | |
| Power dissipation, TC=25°C |
Ptot |
75 |
W |
| Operating and storage temperature |
Tj,Tstg |
-55to+175 |
| Technical/Catalog Information | SDT10S60 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Diode Type | Silicon Carbide |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 350A @ 600V |
| Speed | No Recovery Time > 500mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220-2 |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | 350pF @ 0V, 1MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SDT10S60 SDT10S60 |