Features: Super high dense cell design for low RDS (ON).Rugged and reliable.TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous @ TJ=125 -Pulseda...
SDU/D40N03L: Features: Super high dense cell design for low RDS (ON).Rugged and reliable.TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS ...
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Super high dense cell design for low RDS (ON).
Rugged and reliable.
TO-252 and TO-251 Package.
Parameter |
Symbol |
Limit |
Unit |
Drain-S ource Voltage |
VDS |
30 |
V |
Gate-S ource Voltage |
VGS |
±20 |
V |
Drain Current-Continuous @ TJ=125 -Pulseda |
ID |
40 |
A |
IDM |
120 |
A | |
Drain-S ource Diode Forward Current |
IS |
40 |
A |
Maximum Power Dissipation @ Tc=25Derate above 25 |
PD |
50 |
W |
0.3 |
W/ | ||
Operating and S torage Temperature R ange |
TJ , TSTG |
-55 to 175 |
|
THE RMAL CHARACTER ISTICS | |||
Thermal R esistance, Junction-to-Case |
R JC |
3 |
/W |
Thermal R esistance, Junction-to-Ambient |
R JA |
50 |
/W |