SE1230Q

`Single +3.3 V supply
`Power dissipation = 230 mW (typ)
`Noise figure < 12 dB
`Small signal gain = 23.5 dB differential
`Fully integrated AGC function
`On-chip 50 input and output terminations
`Wide bandwidth (3 dB) > 2.0 GHz
`Maximum input level of 200 mVpk
`AGC output level of 370 mVpk differential
`Loss of signal functionality
`Single-ended or differential operation
`Minimal external components 􀂃
`Operating ambient temperature range = -40°C to +85°C 􀂃
`Equivalent to Nortel Networks AC10

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below.

SiGe Semiconductor offers a portfolio of optical networking ICs SE1230Q for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s.

SiGe Semiconductor's SE1230Q is a fully integrated AGC amplifier aimed primarily at SONET OC-48 and SDH STM-16 systems. The device may also be used in any datacom application with input data rates up to 2.5 Gb/s.

The device SE1230Q is designed with differential I/Os and signal levels compatible with SiGe Semiconductor's SE1030 and SE1031 transimpedance amplifiers. A system block diagram is shown after the functional description, on page 4.

Optimum performance is provided by differential connections but with appropriate terminations, the device SE1230Q can also be used in single-ended mode if required by the application.

The SE1230Q is configured as a variable gain amplifier, with automatic gain control. It comprises a variable-gain block driving a 50 output driver (see the functional block diagram on page 1). The device requires a single +3.3 V power supply.