DescriptionThe SEMiX253GD176HDc is designed as one kind of trench IGBT module that has four points of features:(1)homogeneous Si;(2)trench = trenchgate technology;(3)VCE with positive temperature coefficient;(4)high short circuit capability. And this device can be used in (1)AC inverter drives;(2)...
SEMiX253GD176HDc: DescriptionThe SEMiX253GD176HDc is designed as one kind of trench IGBT module that has four points of features:(1)homogeneous Si;(2)trench = trenchgate technology;(3)VCE with positive temperature co...
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The SEMiX253GD176HDc is designed as one kind of trench IGBT module that has four points of features:(1)homogeneous Si;(2)trench = trenchgate technology;(3)VCE with positive temperature coefficient;(4)high short circuit capability. And this device can be used in (1)AC inverter drives;(2)UPS;(3)electronic welders.
The absolute maximum ratings of the SEMiX253GD176HDc can be summarized as:(1)VCES: 1200 V;(2)Ic: 420 A;(3)ICRM: 450 A(4)VGES: +/-20 V;(5)Tvj: -40 to +150 ;(6)Visol: 4000 V. If you want to know more information such as the electrical characteristics about the SEMiX253GD176HDc, please download the datasheet in www.seekic.com or www.chinaicmart.com .