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SFF11N80

Features: • Rugged Construction with Polysilicon Gate Cell• Low RDS(ON) and High Transconductance• Excellent High Temperature Stability• Very Fast Switching Speed• Fast Recovery and Superior dV/dt performance• Increased Reverse Energy Capability• Low Input...

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SeekIC No. : 004488191 Detail

SFF11N80: Features: • Rugged Construction with Polysilicon Gate Cell• Low RDS(ON) and High Transconductance• Excellent High Temperature Stability• Very Fast Switching Speed• Fast...

SFF11N80 Data Sheet

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Part Number:
SFF11N80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed, Isolated Package
• Ceramic Seal Package Available. Contact Factory
• TX, TXV, S-Level screening available
• Replacement for IXTH11N80 Types


Specifications

Maximum Ratings

Symbol

Value

Units

Drain to Source Voltage

VDS

800

Volts

Gate to Source Voltage

VGS

±20

Volts

Continues Collector Current

ID

11

Amps

Power Dissipation TC = 25ºC
                             TC = 55ºC

PD

 150
114

  W

Operating & Storage Temperature

Top & Tstg

-55 to +175

ºC

Maximum Thermal Resistance
Junction to Case

RJC

0.83

ºC/W




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