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SFF1310M

Features: • Rugged construction with polysilicon gate• Low RDS (on) and high transconductance• Excellent high temperature stability• Very fast switching speed• Fast recovery and superior dv/dt performance• Increased reverse energy capability• Low input and...

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SeekIC No. : 004488196 Detail

SFF1310M: Features: • Rugged construction with polysilicon gate• Low RDS (on) and high transconductance• Excellent high temperature stability• Very fast switching speed• Fast rec...

SFF1310M Data Sheet

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Part Number:
SFF1310M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Rugged construction with polysilicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV, and Space Level screening available
• Replaces: SMM40N20 Type


Specifications

Maximum Ratings

Symbol

Value

Units

Drain to Source Voltage

VDS

200

Volts

Gate to Source Voltage

VGS

±20

Volts

Continuous Drain Current @ VGS = 5V

ID

40

Amps

Operating & Storage Temperature

Top & Tstg

-55 to +175

ºC

Thermal Resistance, Junction to Case

RJC

0.5

ºC/W

Power Dissipation

TC = 25ºC
TC = 55ºC

PD

250
190

W




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