SFF9250L

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-3PF
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.23 Ohms
Continuous Drain Current : - 12.6 A


Features:

` Logic-Level Gate Drive
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitances
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10uA (Max.) @ V<sub>DS</sub>=-200V
` Lower R_DS(ON) : 0.175 (Typ.)


Specifications

Symbol	Characteristic	Value	Units
VDSS	Drain-to-Source Voltage	-200	V
ID	Continuous Drain Current (TC=25)	-12.6	A
	Continuous Drain Current (TC=100)	-7.9
IDM	Drain Current-Pulsed	-50.4	A
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulsed Avalanche Energy	990	mJ
IAR	Avalanche Current	-12.6	A
EAR	Repetitive Avalanche Energy	20.4	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
PD	Total Power Dissipation (TC=25) Linear Derating Factor	90 0.72	W W/°C
TJ,TSTG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
TL	Maximum Lead Temp. for Soldering Purposes, 1/18" from case for 5-seconds	300

Parameters:

Technical/Catalog Information	SFF9250L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	12.6A
Rds On (Max) @ Id, Vgs	230 mOhm @ 6.3A, 5V
Input Capacitance (Ciss) @ Vds	3250pF @ 25V
Power - Max	90W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 5V
Package / Case	TO-3PF
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SFF9250L SFF9250L