SFH054

Features:

` Low R<sub>DS</sub>(on) (0.014 )@V<sub>GS</sub>=10V
` Low Gate Charge (Typical 70nC)
` Low Crss (Typical 160pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (175°C)


Specifications

Symbol	Characteristic	Value	Units
VDSS	Drain-to-Source Voltage	60	V
ID	Continuous Drain Current (TC=25)	70*	A
	Continuous Drain Current (TC=100)	64
IDM	Drain Current-Pulsed (Note 1)	360	A
VGS	Gate-to-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	800	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Total Power Dissipation(@TC = 25 °C)	230	W W/°C
	Derating Factor above 25 °C	1.5
TSTG,TJ	Operating Junction Temperature & Storage Temperature	- 55 ~ 175	°C
TL	Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.	300

Description

This Power MOSFET SFH054 is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET SFH054 is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.