DescriptionThe SFH212 is a silicon photodiode in planar technology. The N-Si material used results in a positive front and negative back contact. The features of the SFH212 are: (1)package: 18A3 DIN 41870, glass lens, hermetically sealed package, solder tabs, lead spacing 2.54mm; (2)anode marking:...
SFH212: DescriptionThe SFH212 is a silicon photodiode in planar technology. The N-Si material used results in a positive front and negative back contact. The features of the SFH212 are: (1)package: 18A3 DIN...
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The SFH212 is a silicon photodiode in planar technology. The N-Si material used results in a positive front and negative back contact. The features of the SFH212 are: (1)package: 18A3 DIN 41870, glass lens, hermetically sealed package, solder tabs, lead spacing 2.54mm; (2)anode marking: tab at case bottom; (3)high reliability; (4)no testable degradation; (5)high packing density; (6)low noise; (7)high open-circuit voltage as photovoltaic cells; (8)detector for low illuminance; (9)short seitching time; (10)high spectral sensitivity; (11)wide temperature range; (12)suitable for use in the visible light and near infrared range.
The following is about the absolute maximum ratings of SFH212: (1)operating and storage temperature range: -40 to +80; (2)soldering temperature: 230; (3)reverse voltage: 7V; (4)total power dissipation: 200mW.
The electrical characteristics of the SFH212 are: (1)spectral sensitivity: 25(20)nA/lx; (2)wavelength of max sensitivity: 800nm; (3)range of spectral sensitivity: 350 to 1100nm; (4)radiant sensitive area: 0.97 mm2; (5)dimensions of the radiant sensitive area: 0.985x0.985 mm; (6)distance between chip surface and package surface: 2.6-3.2 mm; (7)half angle: ±15deg; (8)dark current: 5(20)nA; (9)spectral sensitivity: 0.50 A/W.