SFH480402

DescriptionThe features of SFH480402 are as follows: (1)monochromatic,coherent radiation source for pulse and cw-operation; (2)MOCVD quantum-well structure; (3)dielectric asymmetric coated laser mirrors; (4)emissionwidth:200m. The specified values apply only as long as the diode is not overloaded....

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SeekIC No. : 004488382 Detail

SFH480402: DescriptionThe features of SFH480402 are as follows: (1)monochromatic,coherent radiation source for pulse and cw-operation; (2)MOCVD quantum-well structure; (3)dielectric asymmetric coated laser mir...

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Part Number:
SFH480402
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Description

The features of SFH480402 are as follows: (1)monochromatic,coherent radiation source for pulse and cw-operation; (2)MOCVD quantum-well structure; (3)dielectric asymmetric coated laser mirrors; (4)emissionwidth:200m. The specified values apply only as long as the diode is not overloaded. The power supply should therefore be provided with approriate protection circuits. It is recommended to observe the same rules as for handling MOS-devices to avoid electro-static introduced damage.

The applications of SFH480402 are pumping of Nd-YAG-Lasers, medical applications and testing and measurement applications. What comes next is about the maximum ratings: (1)cw-output power:1050mW; (2)pulse-output power: 1300mW; (3)reverse voltage: 3V; (4)operating temperature: -10 to +60; (5)storage temperature: -40 to +70; (6)maximum soldering temperature, 10s max: 140.

The following is about the electrical characteristics of SFH480402: (1)recommended operating temperature: +10 to +35; (2)emission wavelength: 809±5nm; (3)spectral width: 2nm; (4)cw-output power: 1000mW; (5)threshold current: 450mA; (6)differential efficiency: 0.75W/A; (7)operating current: 1780mA; (8)differential serial resistance: 0.2; (9)characteristic temperature for threshold current; 150K; (10)temperature coefficient of operating current: 0.5%/K; (11)temperature coefficient of wavelength: 0.25nm/K to 0.30nm/K; (12)thermal resisitance; pn-junction-heat sink: 9K/W.




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