Features: • Good CTR Linearity Depending on Forward Current• Low CTR Degradation• High Collector-emitter Voltage, V CEO = 55 V• Isolation Test Voltage, 5300 V RMS• Low Coupling Capacitance• End-Stackable, 0.100 (2.54 mm) Spacing• High Common-mode Interfe...
SFH618A-4X006: Features: • Good CTR Linearity Depending on Forward Current• Low CTR Degradation• High Collector-emitter Voltage, V CEO = 55 V• Isolation Test Voltage, 5300 V RMS• Low ...
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Transistor Output Optocouplers Phototransistor Out Single CTR > 40-80%

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
The SFH618A-4X006 (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. The SFH618A-4X006 has a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package.
The SFH618A-4X006 is designed for signal transmission between two electrically separated circuits.
The SFH618A-4X006 is end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of > 8.0 mm achieved with option 6. The SFH618A-4X006 complies with IEC 60950 (DIN VDE 0805) for reinforced insulation to an operation voltage of 400 VRMS or DC.