Photodetector Transistors PHOTOTRANSISTOR
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| Maximum Power Dissipation : | 200 mW | Maximum Dark Current : | 50 nA |
| Package / Case : | T-1 3/4 |
| Bezeichnung Description |
Symbol Symbol |
Wert Value |
Einheit Unit |
| Betriebs- und Lagertemperatur Operating and storage temperature range |
Top; Tstg | 55 ... + 100 | °C |
| Löttemperatur bei Tauchlötung Lötstelle 2 mm vom Gehäuse, Lötzeit t 5 s Dip soldering temperature2 mm distance from case bottom, soldering time t 5 s |
TS | 260 | °C |
| Löttemperatur bei Kolbenlötung Lötstelle 2 mm vom Gehäuse, Lötzeit t 3 s Iron soldering temperature 2 mm distance from case bottom t 3 s |
TS | 300 | °C |
| Kollektor-Emitterspannung Collector-emitter voltage |
VCE | 35 | V |
| Kollektorstrom Collector current |
IC | 50 | mA |
| Kollektorspitzenstrom, < 10 s Collector surge current |
ICS | 35 | mA |
| Emitter-Kollektorspannung Emitter-collector voltage |
VEC | 50 | V |