Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 mA (Max.) @ VDS = -200V· Low RDS(ON) : 2.084 W (Typ.)Specifications Symbol Characteristic Value Units ...
SFI9610: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 mA (Max.) @ VDS = -200V...
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Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
-200 |
V |
ID |
Continuous Drain Current (TC=25) |
-1.75 |
A |
Continuous Drain Current (TC=100) |
-1.0 | ||
IDM |
Drain Current-Pulsed |
-7.0 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy |
143 |
mJ |
IAR |
Avalanche Current |
-1.75 |
A |
EAR |
Repetitive Avalanche Energy |
2.0 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
PD |
Total Power Dissipation (TA=25)* |
3.1 |
W |
Total Power Dissipation (TC=25) Linear Derating Factor |
20 0.16 |
W W/°C | |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |