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SFP2955

MOSFET P-CH/60V/9.4A/0.3OHM

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SeekIC No. : 00160820 Detail

SFP2955: MOSFET P-CH/60V/9.4A/0.3OHM

SFP2955 Data Sheet

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Part Number:
SFP2955
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : - 9.4 A Resistance Drain-Source RDS (on) : 0.3 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : - 9.4 A
Resistance Drain-Source RDS (on) : 0.3 Ohms


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Opereting Temperature
` Extended Safe Operating Area
` Lower Leakage Current : -10 A (Max.) @ VDS = -60V
` Low RDS(ON) : 0.22  (Typ.)


Specifications

Symbol
Characteristic
Value
Units
VDSS

Drain-to-Source Voltage
-60
V
ID
 Continuous Drain Current (TC=25)
-9.4
A
Continuous Drain Current (TC=100)
-6.6
IDM
 Drain Current-Pulsed
-38
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy
151
mJ
IAR
 Avalanche Current
-9.4
A
EAR
 Repetitive Avalanche Energy
4.9
mJ
dv/dt
 Peak Diode Recovery dv/dt
-5.5
V/ns
PD
 Total Power Dissipation (TC=25)
Linear Derating Factor
49
0.33
W
W/°C
TJ,TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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