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SFP7N60

Features: R DS(on) (Max 1.2 )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Contin...

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SFP7N60: Features: R DS(on) (Max 1.2 )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Sy...

SFP7N60 Data Sheet

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Part Number:
SFP7N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

R DS(on) (Max 1.2 )@VGS=10V
Gate Charge (Typical 28nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain to Source Voltage
600
V
ID
 Continuous Drain Current(@TC = 25°C)
7.0
A

Continuous Drain Current(@TC = 100°C)
4.4
A
IDM
 Drain Current Pulsed (Note 1)
28
A
VGS
 Gate to Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy (Note 2)
420
mJ
EAR
 Repetitive Avalanche Energy (Note 1)
14.7
mJ
dv/dt
 Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD
 Total Power Dissipation(@TC = 25 °C)
147
W
Derating Factor above 25 °C
1.18
W/
TSTG,TJ
 Operating Junction Temperature & Storage Temperature
-55~150
TL
 Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300



Description

The SFP7N60 is produced using Semiwell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. The SFP7N60 is well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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