SFP9630

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 200 V
Continuous Drain Current : - 6.5 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : -10 A (Max.) @ V_DS = -200V
` Low R_DS(ON) : 0.581  (Typ.)


Specifications

Symbol	Characteristic	Value	Units
VDSS	Drain-to-Source Voltage	-200	V
ID	Continuous Drain Current (TC=25)	-6.5	A
	Continuous Drain Current (TC=100)	-4.0
IDM	Drain Current-Pulsed	-26	A
VGS	Gate-to-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy	563	mJ
IAR	Avalanche Current	-6.5	A
EAR	Repetitive Avalanche Energy	7.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
PD	Total Power Dissipation (TC=25) Linear Derating Factor	70 0.56	W W/°C
TJ,TSTG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
TL	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300

Parameters:

Technical/Catalog Information	SFP9630
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	800 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds	965pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SFP9630 SFP9630