MOSFET P-CH/200V/11A/0.5OHM
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | - 11 A | ||
| Resistance Drain-Source RDS (on) : | 0.5 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-200 |
V |
|
ID |
Continuous Drain Current (TC=25) |
-11 |
A |
| Continuous Drain Current (TC=100) |
-7.0 | ||
|
IDM |
Drain Current-Pulsed |
-44 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
807 |
mJ |
|
IAR |
Avalanche Current |
-11 |
A |
|
EAR |
Repetitive Avalanche Energy |
12.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
123 0.98 |
W W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |
| Technical/Catalog Information | SFP9640 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1585pF @ 25V |
| Power - Max | 123W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SFP9640 SFP9640 |