SFP9Z24

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.28 Ohms
Continuous Drain Current : - 9.7 A


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175oC Opereting Temperature
` Extended Safe Operating Area
` Lower Leakage Current : -10 A (Max.) @ V<sub>DS</sub> = -60V
` Low R_DS(ON) : 0.206 (Typ.)


Specifications

Symbol	Characteristic	Value	Units
VDSS	Drain-to-Source Voltage	-60	V
ID	Continuous Drain Current (TC=25)	-9.7	A
	Continuous Drain Current (TC=100)	-6.8
IDM	Drain Current-Pulsed	-40	A
VGS	Gate-to-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy	161	mJ
IAR	Avalanche Current	-9.7	A
EAR	Repetitive Avalanche Energy	4.9	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.5	V/ns
PD	Total Power Dissipation (TC=25) Linear Derating Factor	49 0.33	W W/°C
TJ,TSTG	Operating Junction and Storage Temperature Range	- 55 to +175	°C
TL	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300

Parameters:

Technical/Catalog Information	SFP9Z24
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	9.7A
Rds On (Max) @ Id, Vgs	280 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 25V
Power - Max	49W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SFP9Z24 SFP9Z24