DescriptionThe features of the SFT6200 are: (1)radiation tolerant; (2)fast switching, 150NSEC max ton; (3)high frequency, typical fT 100MHz; (4)bvceo 80 V min; (5)high linear gain, low saturation voltage; (6)200 operating, gold eutectic die attach; (7)designed for complementary use with 2N6188 and...
SFT6200: DescriptionThe features of the SFT6200 are: (1)radiation tolerant; (2)fast switching, 150NSEC max ton; (3)high frequency, typical fT 100MHz; (4)bvceo 80 V min; (5)high linear gain, low saturation vo...
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The features of the SFT6200 are: (1)radiation tolerant; (2)fast switching, 150NSEC max ton; (3)high frequency, typical fT 100MHz; (4)bvceo 80 V min; (5)high linear gain, low saturation voltage; (6)200 operating, gold eutectic die attach; (7)designed for complementary use with 2N6188 and 2N6189.
The following is about the absolute maximum ratings of SFT6200: (1)collector-emitter voltage: 80V; (2)collector-base voltage: 120V; (3)emitter-base voltage: 7V; (4)collector current: 10A; (5)base current: 2A; (6)total device dissipation @ TC=100: 30W; (7)derate above 100: 300W/; (8)operating and storage temperature: -65 to 200.
The electrical characteristics of the SFT6200 are: (1)collector cutoff current(VCE=120V): 200uAdc; (2)collector cutoff current(VCE=80V, TC=150): 100uAdc; (3)emitter cutoff current: 10uAdc; (4)DC current gain(Ic=10A, VCE=2V): 40 min and 250 typical; (5)collector-emitter saturation voltage: 0.5V; (6)base-emitter saturation voltage: 1.3V.