SFU9230B

Features:

` -5.4A, -200V, R<sub>DS(on)</sub> = 0.8 @V<sub>GS</sub> = -10 V
` Low gate charge ( typical 33 nC)
` Low Crss ( typical 45 pF)
` Fast switching
` 100% avalanche tested
` Improved dv/dt capability


Specifications

Symbol	Parameter	SFR9230B / SFU9230B	Units
VDSS	Drain-Source Voltage	-200	V
ID	Drain Current - Continuous (TC=25) - Continuous (TC=100)	-5.4	A
		-3.4	A
IDM	Drain Current - Pulsed (Note 1)	-22	A
VGS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	390	mJ
IAR	Avalanche Current (Note 1)	-5.4	A
EAR	Repetitive Avalanche Energy (Note 1)	4.9	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
PD	Power Dissipation (TA=25) *	2.5	W
	Power Dissipation (TC=25) - Derate above 25°C	49	W
		0.39	W/°C
TJ,TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

The SFU9230B is produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The SFU9230B is well suited for high efficiency switching DC/DC converters.