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Part Number: SFX9130J

 

 

 

 

 

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SFX9130J Maximum Ratings

Electrical Characteristics

Symbol

Value

Units

Drain - Source Voltage

VDSS

-100

V

Gate Source Voltage

VGS

±20

V

Max. Continuous Drain Current (package limited) @ TC = 25ºC
                                                                            @ TC = 100ºC

ID1
ID2

10
7

A

Max. Avalanche current @ L= 5.0 mH

IAR

9.8

A

Repetitive Avalanche Energy @ L= 5.0 mH

EAR

5.2

mJ

Single Pulse Avalanche Energy @ L= 5.0 mH

EAS

320

mJ

Total Power Dissipation @ TC = 25ºC

PD

75

W

Operating & Storage Temperature

TOP & TSTG

-55 to +150

ºC

Maximum Thermal Resistance (Junction to Case)

R0JC

1.65

ºC/W

SFX9130J Features

· Rugged construction with polysilicon gate
· Low ON-resistance and high transconductance
· Excellent high temperature stability
· Hermetically Sealed, Isolated Package
· Low Total Gate Charge
· Fast Switching
· replacement for IRF9130 types
· TX, TXV, S-Level screening available

SFX9130J datasheet

SFX9130J
PDF/DataSheet Download

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  • ·SFX-2020
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