SG1000GXH26

Features of the SG1000GXH26 are:(1)repetitive peak off-state voltage:VDRM=4500V;(2)R.M.S. on-state current:IT(RMS)=500A;(3)peak turn-off current:ITGQM=1000A;(4)critical rate of rise of on-state current:di/dt=600A/s;(5)critical rate of rise of off-state voltage:dv/dt=1000V/s.

The absolute maximum ratings of the SG1000GXH26 can be summarized as:(1):the characteristics is repetitive peak off-state voltage,the symbol is VDRM,the rating is 4500,the unit is V;(2):the characteristics is repetitive peak reverse voltage,the symbol is VRRM,the rating is 16,the unit is V;(3):the characteristics is peak turn-off current,the symbol is ITGQM,the rating is 1000,the unit is A;(4):the characteristics is R.M.S on-state current,the symbol is IT(RMS),the rating is 500,the unit is A; (5):the characteristics is peak one cycle surge on-state current(non-repetitive,10 ms width half sine waveform),the symbol is ITSM,the rating is 8000,the unit is A;(6):the characteristics is critical rate of rise of on-state current,the symbol is di/dt,the rating is 600,the unit is A/s;(7):the characteristics is peak forward gate current,the symbol is IGM,the rating is 450,the unit is A;(8):the characteristics is average gate power dissipation,the symbol is PG(AV),the rating is 80,the unit is W;(9):the characteristics is peak reverse gate voltage(at static),the symbol is VRGM,the rating is 16,the unit is V;(10):the characteristics is R.M.S gate current,the symbol is IG(RMS),the rating is 42,the unit is A;(11):the characteristics is junction temperature,the symbol is Tj,the rating is -40 to 125,the unit is ;(12):the characteristics is storage temperature range,the symbol is Tstg,the rating is -40 to 150,the unit is ;(13):the characteristics is mounting force,the rating is 13.7±1.4,the unit is kN.