SG4500GXH25

The SG4500GXH25 is a kind of thyristor designed for inverter application. The device has the following features: (1)repetitive peak off-state voltage: VDRM=4500 V; (2)repetitive peak reverse voltage: VRRM=4000 V; (3)RMS on-state current: IT(RMS)=3000 A; (4)critical rate of rise of on-state current: di/dt=300 A/s; (5)critical rate of rise of off-state voltage: dv/dt=1000 V/s; (6)peak turn-off current: ITGQM=4500 A.

The following is about the absolute maximum ratings of SG4500GXH25 : (1)repetitive peak off-state voltage, VDRM: 4500 V; (2)repetitive peak reverse voltage, VRRM: 4000 V; (3)peak turn-off current, ITGQM: 4500 A; (4)RMS on-state current, IT(RMS); 3000 A; (5)peak one cycle surge on-state current (non-repetitive), ITSM: 46000 A; (6)peak forward gate current, IFGM: 200 A; (7)critical rate of rise of on-state current, di/dt: 300 A/s; (8)average forward gate power dissipation, PFG(AV): 190 W; (9)average reverse gate power dissipation, PRG(AV): 550 W; (10)RMS gate current, IG(RMS): 84 A; (11)peak reverse gate voltage, VRGM: 17 V; (12)junction temperature, Tj: -40 to 115; (13)storage temperature, Tstg: -40 to 115.

The last one is about the electrical characteristics of SG4500GXH25 : (1)repetitive peak off-state voltage repetitive peak reverse current, IDRM: 300 mA max when VDRM=4500 V, VGK=-10 V, Tj=115; (2)repetitive peak reverse current, IRRM: 300 mA max when VRRM=4000 V, Tj=115; (3)repetitive peak reverse gate current, IRGM: 10 mA max when VRGM=17 V, Tj=125; (4)peak on-state voltage, VTM: 4.0 V max at ITM=4500 A, Tj=115; (5)gate trigger voltage, VGT: 2.0 V max at VD=24 V, RL=0.1, Tj=25; (6)gate trigger current, IGT: 10 A max at VD=24 V, RL=0.1, Tj=25.