ApplicationSirenza Microdevices' SGA-8343X is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage battery operated systems. The device provide...
SGA-8343X: ApplicationSirenza Microdevices' SGA-8343X is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343X is optimized f...
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Sirenza Microdevices' SGA-8343X is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage battery operated systems. The device provides high gain, low NF, and excellent linearityat a low cost. It can be operated at very low bias currents in applications where high linearity is not required.