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SGB10N60

IGBT Transistors FAST IGBT NPT TECH 600V 10A

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SeekIC No. : 00143695 Detail

SGB10N60: IGBT Transistors FAST IGBT NPT TECH 600V 10A

SGB10N60 Data Sheet

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Part Number:
SGB10N60
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-263-3


Features:

• 75% lower Eoff compared to previous generation combined with
   low conduction losses
• Short circuit withstand time 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current
TC = 25°C
TC = 100°C		 IC 21
10.9		 A
Pulsed collector current, tp limited by Tjmax ICpul s 42
Turn off safe operating area
VCE 600V, Tj 150°C		 - 42
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C		 EAS 70 mJ
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C		 tSC 10 s
Power dissipation
TC = 25°C		 Pt o t 104 W
Operating junction and storage temperature Tj , Tstg -55...+150 °C



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