Features: • Single Fixed 5V Supply• Supply Drop Resistor not required• Patented Self Bias Circuitry• P1dB = 18.3 dBm at 1950 MHz• IP3 = 34.3 dBm at 1950 MHz• Robust 1000V ESD, Class 1C HBMApplication• PA Driver Amplifier• Cellular, PCS, GSM, UMTSR...
SGC-6386Z: Features: • Single Fixed 5V Supply• Supply Drop Resistor not required• Patented Self Bias Circuitry• P1dB = 18.3 dBm at 1950 MHz• IP3 = 34.3 dBm at 1950 MHz• Robu...
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Series | SGC |
Frequency (MHz) | 50 to 4000 |
Gain (dB) | 16.3 |
NF (dB) | 3.4 |
OP1dB (dBm) | 19.3 |
OIP3 (dBm) | 35.6 |
Vcc (V) | 5 |
Id (mA) | 85 |
Package/Size (Dim in mm) | SOT-86 |
Parameter | Absolute Limit |
Max Device Current (ICE) Max Device Voltage (VCE) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. |
120 mA 6.5 V +18 dBm +150 -40 to +85 +150 |
Sirenza Microdevices' SGC-6386Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6386Z does not require a drop resistor as compared to typical Darlington amplifiers. The SGC-6386Z product is designed for high linearity 5V gain block applications that require small size and minimal external components.
SGC-6386Z is internally matched to 50 ohms. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.