IGBT Transistors 600V/12A
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Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A...
Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 3 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 23 A | Gate-Emitter Leakage Current : | 30 W | ||
| Power Dissipation : | 92 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-3PF-3 | Packaging : | Tube |
| Technical/Catalog Information | SGF23N60UFDTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 12A |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Mounting Type | Through Hole |
| Package / Case | TO-3PF |
| Packaging | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SGF23N60UFDTU SGF23N60UFDTU |