IGBT Transistors Dis High Perf IGBT
SGF40N60UFTU: IGBT Transistors Dis High Perf IGBT
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Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 20A...
Features: * High Speed Switching* Low Saturation Voltage: VCE(sat) = 2.0 V (@ Ic=20A)* High Input ...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 40 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
| Power Dissipation : | 100 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-3PF-3 | Packaging : | Tube |