SGH5N120RUFD

Features:

• Short circuit rated 10s @ T_C = 100°C, V_GE = 15V
• High speed switching
• Low saturation voltage : V _CE(sat)  = 2.3 V @ I_C = 5A
• High input impedance
• CO-PAK, IGBT with FRD : t_rr = 55ns (typ.)


Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.


Specifications

Symbol	Description	SGH20N120RUFD	Units
VCES	Collector-Emitter Voltage	1200	V
VCES	Gate-Emitter Voltage	± 25	V
IC	Collector Current @ TC = 25	8	A
	Collector Current @ TC = 100	5	A
I CM(1)	Pulsed Collector Current	15	A
IF	Diode Continuous Forward Current @ TC = 100	5	A
IFM	Diode Maximum Forward Current	30	A
TSC	Short Circuit Withstand Time @ TC = 100	10	s
PD	Maximum Power Dissipation @ TC = 25	74	W
	Maximum Power Dissipation @ TC = 100	30	W
TJ	Operating Junction Temperature	-55 to +150
Tstg	Storage Temperature Range	-55 to +150
TL	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300

Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switchinglosses as well as short circuit ruggedness.

The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.