MFG:FAIRCHILD Package Cooled:TO
MFG: FAIRCHILD
Package Cooled: TO
Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switchinglosses as we...
| Symbol | Description | SGH20N120RUFD | Units |
| VCES | Collector-Emitter Voltage | 1200 | V |
| VCES | Gate-Emitter Voltage | ± 25 | V |
| IC | Collector Current @ TC = 25 | 8 | A |
| Collector Current @ TC = 100 | 5 | A | |
| I CM(1) | Pulsed Collector Current | 15 | A |
| IF | Diode Continuous Forward Current @ TC = 100 | 5 | A |
| IFM | Diode Maximum Forward Current | 30 | A |
| TSC | Short Circuit Withstand Time @ TC = 100 | 10 | s |
| PD | Maximum Power Dissipation @ TC = 25 | 74 | W |
| Maximum Power Dissipation @ TC = 100 | 30 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | |
| Tstg | Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
SGH5N120RUFD
PDF/DataSheet Download
Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses aswell as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and ge...
IGBT HI PERFORM 600V 20A TO-3P
IGBT HI PERFORM 600V 20A TO-3P
The features of SGH40N60UFD are: (1)High speed switching; (2)Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A; (3)High input impedance; (4)CO-PAK, IGBT with FRD : trr = 42ns (typ.). The following is about the absolute maximum ratings of SGH40N60UFD: (1)...
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
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