SGL50N60RUFDTU

IGBT Transistors N-CH 600V 50A

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SGL50N60RUFDTU: IGBT Transistors N-CH 600V 50A

floor Price/Ceiling Price

US $ 3.06~4.5 / Piece | Get Latest Price
Part Number:
SGL50N60RUFDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $4.5
  • $4.05
  • $3.32
  • $3.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 80 A Gate-Emitter Leakage Current : 250 W
Power Dissipation : 250 W Maximum Operating Temperature : + 150 C
Package / Case : TO-264-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 80 A
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Power Dissipation : 250 W
Gate-Emitter Leakage Current : 250 W
Package / Case : TO-264-3


Parameters:

Technical/Catalog InformationSGL50N60RUFDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 50A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-264
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGL50N60RUFDTU
SGL50N60RUFDTU



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