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SGL60N90DG3

Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.0 V @ IC = 60A• High input impedance• Built-in fast recovery diodeApplicationHome appliances, induction heaters, induction heating JARs, and microwave ovens.Specifications Symbol Description SGH...

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SGL60N90DG3: Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.0 V @ IC = 60A• High input impedance• Built-in fast recovery diodeApplicationHome appliances, inducti...

SGL60N90DG3 Data Sheet

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Part Number:
SGL60N90DG3
Supply Ability:
5000

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  • 15 Days
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Product Details

Description



Features:

• High speed switching
• Low saturation voltage : V CE(sat)  = 2.0 V @ IC = 60A
• High input impedance
• Built-in fast recovery diode


Application

Home appliances, induction heaters, induction heating JARs, and microwave ovens.


Specifications

Symbol Description SGH20N120RUFD Units
VCES Collector-Emitter Voltage 900 V
VCES Gate-Emitter Voltage ±25 V
IC Collector Current @ TC = 25 60 A
Collector Current @ TC = 100 42 A
I CM(1) Pulsed Collector Current 120 A
IF Diode Continuous Forward Current @ TC = 100 15 A
PD Maximum Power Dissipation @ TC = 25 180 W
Maximum Power Dissipation @ TC = 100 72 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300



Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. SGL60N90DG3  also have wide noise immunity. These devices are very suitable for induction heating applications.


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