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SGM2013N

Features: • Ultra-small package• Low voltage operation• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz• High stability• Built-in gate protection diodeApplicationUHF-band high-frequ...

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SeekIC No. : 004489433 Detail

SGM2013N: Features: • Ultra-small package• Low voltage operation• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ)...

SGM2013N Data Sheet

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Part Number:
SGM2013N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode


Application

UHF-band high-frequency amplifier and mixer


Specifications

• Drain to source voltage                  VDSX                   6           V
• Gate 1 to source voltage                VG1S                4           V
• Gate 2 to source voltage                VG2S                4           V
• Drain current                                  ID                       18        mA
• Allowable power dissipation           PD                    100       mW
• Channel temperature                     Tch                   125          
• Storage temperature                     Tstg    55 to +150           


Description

The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This SGM2013N FET is suitable for a wide range of applications including cellular/cordless phone.




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