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SGM2014AN

Features: • Ultra small package• Low voltage operation• Low noise: NF = 1.5dB (typ.) at 900MHz• High gain: Ga = 18dB (typ.) at 900MHz• Low cross-modulation• High stability• Built-in gate-protection diodeSpecifications• Drain to source voltage VDSX 1...

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SeekIC No. : 004489436 Detail

SGM2014AN: Features: • Ultra small package• Low voltage operation• Low noise: NF = 1.5dB (typ.) at 900MHz• High gain: Ga = 18dB (typ.) at 900MHz• Low cross-modulation• High ...

SGM2014AN Data Sheet

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Part Number:
SGM2014AN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode




Specifications

• Drain to source voltage                  VDSX                   12 V
• Gate 1 to source voltage                VG1S                  5 V
• Gate 2 to source voltage                VG2S                  5 V
• Drain current                                  ID                     55 mA
• Allowable power dissipation           PD                 100 mW
• Channel temperature                     Tch                   125
• Storage temperature                     Tstg    55 to +150


Description


The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This SGM2014AN FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.




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