SGM2014M

The SGM2014M is designed as one kind of N-channel dual-gate GaAs MESFET for UHF-band low-noise amplification. SGM2014M is suitable for a wide range of applications such as UHF TV tuners, cellular radio and DBS IF amplifiers. Features of this device are:(1)low voltage operation;(2)low noise NF = 1.5 dB (typ.) at 900 MHz;(3)high gain Ga = 18 dB (typ.) at 900 MHz;(4)high stability;(5)built-in gate protection diode.

The absolute maximum ratings of the SGM2014M can be summarized as:(1)drain to source voltage: 12 V;(2)gate 1 to source voltage: -5 V;(3)gate 2 to source voltage: -5 V;(4)drain current: 55 mA;(5)allowable power dissipation: 150 mW;(6)channel temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)drain cut-off current: 50 uA;(2)drain saturation current: 10 to 35 mA;(3)forward trnsfer admittance: 13 to 17 ms;(4)input capacitance: 0.9 to 2.0 pF;(5)feedback capacitance: 25 to 50 fF;(6)noise figure: 1.5 to 2.5 dB;(7)NF associated gain: 15 to 18 dB. If you want to know more information such as the electrical characteristics about the SGM2014M, please download the datasheet in www.seekic.com or www.chinaicmart.com.