SGSP316

The SGSP316 is designed as one kind of N-channel power MOS transistors. This device is diffused multi-cell silicon gate N-channel enhancement mode power-MOS field effect transistors.

Some absolute maximum ratings of the SGSP316 have been concluded into several points as follow. (1)Its drain to source voltage Vgs=0 would be 250V. (2)Its drain to gate voltage Rgs=20Kohms would be 250V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current continuous would be 6A at Tc=25°C and would be 3.8A at Tc=100°C. (5)Its drain current pulsed would be 24A. (6)Its drain inductive current, clamped would be 24A. (7)Its total dissipation at Tc=25°C would be 50W and derating factor would be 0.4W/°C for SOT-82. (8)Its storage temperature range would be from -55°C to 150°C. (9)Its max operating junction temperature would be 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of the SGSP316 are concluded as follow. (1)Its drain-source breakdown voltage would be min 250V. (2)Its zero gate voltage drain current Vgs=0 would be max 250uA. (3)Its gate-body leakage current Vds=0 would be max 100uA. (4)Its gate threshold voltage would be min 2V and max 4V. (5)Its drain to source voltage would be max 3.6V at Id=3A and would be max 8.1V at Id=6A. (6)Its static drain to source on resistance would be max 1.2ohms. (7)Its forward transconductance would be min 1.5mho. (8)Its input capacitance would be typ 38-pF and max 500pF. (9)Its output capacitance would be typ 100pF and max 130pF. (10)Its reverse transfer capacitance would be typ 50pF and max 65pF. (11)Its turn-on time would be typ 28ns. (12)Its rise time would be typ 27ns. (13)Its turn-off delay time would be typ 30us. (14)Its fall time would be typ 30ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!